R6011END3 查看數據表（PDF） - ROHM Semiconductor
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R6011END3 Datasheet PDF : 16 Pages
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R6011END3
Nch 600V 11A Power MOSFET
VDSS
RDS(on)(Max.)
ID
PD
600V
390mΩ
±11A
124W
lFeatures
1) Low on-resistance
2) Low radiation noise
3) Drive circuits can be simple
4) Parallel use is easy
5) Pb-free plating ; RoHS compliant
lOutline
TO-252
lInner circuit
Datasheet
lApplication
Switching
lPackaging specifications
Packing
Embossed Tape
Packing code
TL1
Marking
R6011E
Basic ordering unit (pcs)
2500
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain - Source voltage
Continuous drain current (Tc = 25°C)
Pulsed drain current
VDSS
ID*1
IDP*2
600
V
±11
A
±22
A
Gate - Source voltage
static
AC(f＞1Hz)
VGSS
±20
V
±30
V
Avalanche current, single pulse
IAS
1.8
A
Avalanche energy, single pulse
EAS*3
210
mJ
Power dissipation (Tc = 25°C)
PD
124
W
Junction temperature
Tj
150
℃
Operating junction and storage temperature range
Tstg
-55 to +150
℃
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20180612 - Rev.001
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