R6011END3 查看數據表（PDF） - ROHM Semiconductor

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R6011END3

Nch 600V 11A Power MOSFET

ROHM Semiconductor 

R6011END3

　 　 　 　　 　

　 　 　 　 　 　 　 　 Datasheet

lElectrical characteristics (Ta = 25°C)

Parameter

Symbol

Conditions

Values

Unit

Min. Typ. Max.

Forward Transfer

Admittance

|Yfs|*6 VDS = 10V, ID = 5.5A

3.0 6.0 -

S

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn - on delay time

Rise time

Turn - off delay time

Fall time

Ciss VGS = 0V

- 670 -

Coss VDS = 25V

- 570 - pF

Crss f = 1MHz

- 70 -

td(on)*6 VDD ⋍ 300V, VGS = 10V

-

25

-

tr*6

td(off)*6

ID = 5.5A

RL ⋍ 54.9Ω

- 40 -

ns

- 90 -

tf*6 RG = 10Ω

- 35 -

lGate charge characteristics (Ta = 25°C)

Parameter

Symbol

Conditions

Total gate charge

Gate - Source charge

Gate - Drain charge

Gate plateau voltage

Qg*6

Qgs*6

Qgd*6

V(plateau)

VDD ⋍ 300V

ID = 11A

VGS = 10V

VDD ⋍ 300V, ID = 11A

Values

Unit

Min. Typ. Max.

- 32 -

-

5

- nC

- 17 -

- 6.0 -

V

*1 Limited only by maximum channel temperature allowed

*2 Pw ≤ 10μs, Duty cycle ≤ 1%

*3 L≒100mH, VDD=50V, RG=25Ω, STARTING Tj=25℃

*4 TC=25℃

*5 Mounted on a epoxy PCB FR4 (25mm x 27mm x 0.8mm)

*6 Pulsed

　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　

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