R6547KNZ4 查看數據表（PDF） - ROHM Semiconductor
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R6547KNZ4 Datasheet PDF : 14 Pages
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R6547KNZ4
Nch 650V 47A Power MOSFET
VDSS
RDS(on)(Max.)
ID
PD
650V
0.080Ω
±47A
480W
lFeatures
1) Low on-resistance
2) Fast switching speed
3) Parallel use is easy
4) Pb-free plating ; RoHS compliant
lOutline
TO-247
lInner circuit
Datasheet
lApplication
Switching
lPackaging specifications
Packing
Tube
Packing code
C13
Marking
R6547KNZ4
Quantity (pcs)
600
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain - Source voltage
Continuous drain current (Tc = 25°C)
Pulsed drain current
VDSS
ID*1
IDP*2
650
V
±47
A
±141
A
Gate - Source voltage
static
AC(f＞1Hz)
VGSS
±20
V
±30
V
Avalanche current, single pulse
IAS
9.3
A
Avalanche energy, single pulse
EAS*3
1222
mJ
Power dissipation (Tc = 25°C)
PD
480
W
Junction temperature
Tj
150
℃
Operating junction and storage temperature range
Tstg
-55 to +150
℃
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20190527 - Rev.002
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