R6547KNZ4 查看數據表（PDF） - ROHM Semiconductor

零件编号

产品描述 (功能)

生产厂家

R6547KNZ4

Nch 650V 47A Power MOSFET

ROHM Semiconductor 

R6547KNZ4

　 　 　 　　 　

　 　 　 　 　 　 　 　 Datasheet

lElectrical characteristics (Ta = 25°C)

Parameter

Symbol

Conditions

Values

Unit

Min. Typ. Max.

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn - on delay time

Rise time

Turn - off delay time

Fall time

Ciss VGS = 0V

- 4100 -

Coss VDS = 25V

- 4000 - pF

Crss f = 1MHz

- 110 -

td(on)*5 VDD ⋍ 300V, VGS = 10V

-

50

-

tr*5

td(off)*5

ID = 23.5A

RL ⋍ 12.7Ω

- 120 -

ns

- 150 -

tf*5 RG = 10Ω

- 85 -

lGate charge characteristics (Ta = 25°C)

Parameter

Symbol

Conditions

Total gate charge

Gate - Source charge

Gate - Drain charge

Gate plateau voltage

Qg*5

Qgs*5

Qgd*5

V(plateau)

VDD ⋍ 300V

ID = 47A

VGS = 10V

VDD ⋍ 300V, ID = 47A

Values

Unit

Min. Typ. Max.

- 100 -

- 26 - nC

- 40 -

- 6.2 -

V

*1 Limited only by maximum channel temperature allowed

*2 Pw ≤ 10μs, Duty cycle ≤ 1%

*3 L≒20mH, VDD=50V, RG=25Ω, Starting Tj=25℃

*4 TC=25℃

*5 Pulsed

　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　

www.rohm.com

© 2019 ROHM Co., Ltd. All rights reserved.

3/11

20190527 - Rev.002

Share Link: