DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

BT136S-600E 查看數據表(PDF) - Unspecified

零件编号
产品描述 (功能)
生产厂家
BT136S-600E
ETC
Unspecified ETC
BT136S-600E Datasheet PDF : 4 Pages
1 2 3 4
BT136S-600E
8 Ptot / W
Tmb(max) / C
101
7
104
6
= 180 107
120
5
90
110
4
60
113
30
3
116
2
119
1
122
0
125
0
1
2
3
4
5
IT(RMS) / A
Fig.1. Maximum on-state dissipation, Ptot, versus rms
on-state current, IT(RMS), where α = conduction angle.
1000 ITSM / A
100
dIT/dt limit
T2- G+ quadrant
IT
ITSM
T
time
Tj ini ial = 25 C max
1100us
100us
1ms
10ms
100ms
T/s
Fig.2. Maximum permissible non-repetitive peak
on-state current ITSM, versus pulse width tp, for
sinusoidal currents, tp 20ms.
30 ITSM / A
25
20
15
IT
ITSM
T
time
Tj initial = 25 C max
10
5
01
10
100
1000
Number of cycles at 50Hz
Fig.3. Maximum permissible non-repetitive peak
on-state current ITSM, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
IT(RMS) / A
5
4
107 C
3
2
1
0-50
0
50
100
150
Tmb / C
Fig.4. Maximum permissible rms current IT(RMS) ,
versus mounting base temperature Tmb.
12 IT(RMS) / A
10
8
6
4
2
00 01
0.1
1
10
surge duration / s
Fig.5. Maximum permissible repetitive rms on-state
current IT(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; Tmb 107˚C.
VGT(Tj)
1.6 VGT(25 C)
1.4
1.2
1
0.8
0.6
0.4-50
0
50
100
150
Tj / C
Fig.6. Normalised gate trigger voltage
VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
2016. 08. 17
Revision No : 0
3/4

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]