ES1EF 查看數據表（PDF） - Shanghai Leiditech Electronic Technology Co., Ltd

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ES1EF

Surface Mount Superfast Recovery Rectifier

Shanghai Leiditech Electronic Technology Co., Ltd 

ES1AF-ES1JF

Fig.1 Reverse Recovery Time Characteristic And Test Circuit Diagram

50 ohm

Noninductive

10 ohm

Noninductive

trr

+0.5

+

25Vdc

approx

-

1 ohm

NonInductive

D.U.T

PULSE

GENERATOR

Note 2

OSCILLOSCOPE

Note 1

0

-0.25

Note：1.Rise Time = 7ns, max.

Input Impedance = 1megohm,22pF.

2. Ries Time =10ns, max.

Source Impedance = 50 ohms.

Fig.2 Maximum Average Forward Current Rating

1.2

1.0

0.8

0.6

0.4

Single phase half wave resistive

0.2 or inductive P.C.B mounted on

0.2×0.2"(5×5mm) pad areas

0.0

25 50 75 100 125 150 175

Lead Temperature (°C)

Fig.4 Typical Forward Characteristics

10

TJ=25°C

1.0

0.1

0.01

ES1AF~ES1DF

ES1EF/ES1GF

ES1JF

0.001

0

0.5

1.0

1.5

2.0

2.5

Instaneous Forward Voltage (V)

Fig.6 Maximum Non-Repetitive Peak

Forward Surage Current

35

30

25

20

15

10

8.3 ms Single Half Sine Wave

05

(JEDEC Method)

00

1

10

100

Number of Cycles

-1.0

10ns/div

Set time Base for 10ns/div

Fig.3 Typical Reverse Characteristics

300

100

TJ=125°C

10

TJ=75°C

1.0

TJ=25°C

0.1

0

20

40

60

80

100

% of PIV.VOLTS

Fig.5 Typical Junction Capacitance

14

12

10

8

6

4

TJ=25°C

2 f = 1.0MHz

Vsig = 50mVp-p

0.1

1

10

100

Reverse Voltage (V)

Rev 2.0 :12.01.2019

2/3

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