ASB0230BD 查看數據表（PDF） - Anachip Corporation

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产品描述 (功能)

生产厂家

ASB0230BD

SMD Schottky Barrier Diode

Anachip Corporation 

SMD Schottky Barrier Diode

ASB0230

Maximum Rating (at TA=25ºC unless otherwise noted)

Symbol

Parameter

Conditions

Min Typ Max Unit

VRRM Repetitive peak reverse voltage

-

-

35

V

VR Reverse voltage

-

-

30

V

IO Average forward current

-

-

200 mA

IFSM

Forward current,

surge peak

0603 8.3ms single half sine-wave

-

2000

-

superimposed on rate load

1005 (JEDEC method)

-

3000

-

mA

PD Power Dissipation

0603

1005

-

-

-

-

150

250

mW

TSTG Storage temperature

-40

-

+125 ºC

Tj Junction temperature

-40

-

+125 ºC

Electrical Characteristics (at TA=25ºC unless otherwise noted)

Symbol

Parameter

VF

Forward voltage

IR

Reverse current

CT

Capacitance between

terminals

Conditions

IF=200mADC

VR=30V

F=1MHz, and 10 VDC reverse

voltage

Min. Typ. Max. Unit

-

-

0.50

V

-

-

30 µA

-

9

-

pF

Anachip Corp.

www.anachip.com.tw

Rev. 1.0 Aug 2, 2004

2/3

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