B5817WS 查看數據表（PDF） - Changzhou Shunye Electronics Co.,Ltd.

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产品描述 (功能)

生产厂家

B5817WS

Schottky Barrier Diode

Changzhou Shunye Electronics Co.,Ltd. 

Schottky Barrier Diode

B5817WS-B5819WS

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Reverse breakdown voltage

Symbol Test Condition

IR=1mA

V(BR)

Reverse voltage leakage current IR

Forward voltage

VF

Diode capacitance

CD

VR=20V

VR=30V

VR=40V

B5817WS

B5818WS

B5819WS

VR=4V,f=1MHz

MIN MAX UNIT

B5817WS 20

B5818WS 30

B5819WS 40

B5817WS

B5818WS

B5819WS

IF=1A

IF=3A

IF=1A

IF=3A

IF=1A

IF=3A

V

1

mA

0.45

0.75

0.55

V

0.875

0.6

0.9

120

pF

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

www.shunyegroup.com

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