B5818WS 查看數據表（PDF） - Shenzhen Ping Sheng Electronics Co., Ltd.
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B5818WS Datasheet PDF : 2 Pages
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B5817WS-B5819WS
1.35(0.053)
1.15(0.045)
SOD-323
1.26(.050)
1.24(.048)
SCHOTTKY BARRIER DIODE
FEATURES
For use in low voltage, high frequency inverters
Free wheeling, and polanty protection applications
2.70(0.106)
2.30(0.091)
1.80(0.071)
1.60(0.063)
2.70(0.106)
2.30(0.091)
1.80(0.071)
1.60(0.063)
MECHANICAL DATA
.177(.007)
.089(.003)
0.4(0.016)
.25(0.010)
1.00(.040)
0.80(.031)
0.1(0.004)
MIN
.08(.003)
MIN
Dimensions in millimeters and (inches)
.305(0.012)
.295(0.010)
.72(0.028)
.69(0.027)
Case: Molded plastic body
Terminals: Plated leads solderable per MIL-STD-750,
Method 2026
Polarity: Polarity symbols marked on case
Marking: B5817W:SJ, B5818W:SK, B5819W:SL
Maximum ratings and electrical characteristics, Single diode @TA=25C
PARAMETER
Peak repetitive peak reverse voltage
Working peak
DC Blocking voltage
RMS Reverse voltage
Average rectified output current
Peak forward surge current @=8.3ms
Repetitive peak forward current
Power dissipation
Thermal resistance junction to ambient
Storage temperature
Non-Repetitive peak reverse voltage
SYMBOLS
VRRM
VRWM
VR
VR(RMS)
IO
IFSM
IFRM
Pd
RΘJA
TSTG
VRM
B5817WS
20
14
20
B5818WS
30
21
1
25
625
200
625
-65 to +150
30
B5819WS
40
28
40
UNITS
V
V
A
A
mA
mW
K/W
C
V
Electrical ratings @TA=25C
PARAMETER
Reverse breakdown voltage
Reverse voltage leakage current
Forward voltage
Diode capacitance
SYMBOLS
V(BR)
Min.
20
30
40
IR
VF
CD
Max. Unit
V
V
V
1
mA
0.45
0.75
V
0.55
0.875
V
0.6
0.9
V
120
pF
Test conditions
IR=1mA
B5817WS
B5818WS
B5819WS
VR=20V
VR=30V
VR=40V
B5817WS
B5818WS
B5819WS
B5817WS
IF=1A
IF=3A
B5818WS
B5819WS
VR=4V,f=1.0MHz
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