B5817WS 查看數據表（PDF） - Galaxy Semi-Conductor
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B5817WS Datasheet PDF : 4 Pages
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BL Galaxy Electrical
Production specification
Schottky Barrier Diode
FEATURES
z Extremely low VF.
z Low stored change,majority carrier
conduction.
z Low power loss/high efficient
Pb
Lead-free
B5817WS-B5819WS
APPLICATIONS
z For Use In Low Voltage, High Frequency Inverters.
z Free Wheeling, And Polarity Protection Applications.
ORDERING INFORMATION
Type No.
Marking
B5817WS
SJ
B5818WS
SK
B5819WS
SL
SOD-323
Package Code
SOD-323
SOD-323
SOD-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Parameter
symbol B5817WS B5818WS B5819WS Unit
Non-Repetitive Peak reverse voltage
VRM
20
30
40
V
Peak repetitive Peak reverse voltage
VRRM
Working Peak Reverse voltage
VRWM
20
30
40
V
DC Reverse Voltage
VR
RMS Reverse Voltage
VR(RMS)
14
21
28
V
Average Rectified output Current
Io
1
A
Peak forward surge current@=8.3ms
IFSM
25
A
Repetitive Peak Forward Current
IFRM
625
mA
Power Dissipation
Pd
250
mW
Thermal Resistance Junction to Ambient RθJA
500
℃/W
Storage temperature
TSTG
-65~+150
℃
Document number: BL/SSSKB009
Rev.A
www.galaxycn.com
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