B5817WS 查看數據表（PDF） - Galaxy Semi-Conductor
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B5817WS Datasheet PDF : 4 Pages
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BL Galaxy Electrical
Production specification
Schottky Barrier Diode
B5817WS-B5819WS
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Reverse breakdown voltage
Symbol Test Condition
IR=1mA
V(BR)
Reverse voltage leakage current IR
Forward voltage
VF
Diode capacitance
CD
VR=20V
VR=30V
VR=40V
B5817WS
B5818WS
B5819WS
VR=4V,f=1MHz
MIN MAX UNIT
B5817WS 20
B5818WS 30
B5819WS 40
B5817WS
B5818WS
B5819WS
IF=1A
IF=3A
IF=1A
IF=3A
IF=1A
IF=3A
V
1
mA
0.45
0.75
0.55
V
0.875
0.6
0.9
120
pF
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSSKB009
Rev.A
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