B5817WS 查看數據表（PDF） - Jiangsu High diode Semiconductor Co., Ltd
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B5817WS Datasheet PDF : 4 Pages
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B5817 WS
SOD323 Plastic-Encapsulate Diodes
Schottky Rectifier
Features
● VR 20V
● IFAV 1A
Applications
● High frequency inverters
● Free wheeling
● Polarity protection applications
Marking
● SJ
SOD3 23
HD SD0.63
Parameter
DC reverse voltage
Mean rectifying current
Non-repetitive Peak Forward Surge Current @ t=8.3ms
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
VR
IO
IFSM
PD
RθJA
TJ
TSTG
Value
20
1
15
0.25
400
125
-55 ~ +150
Unit
V
A
A
W
℃/W
℃
℃
Electrical Characteristics (Ta=25℃ Unless otherwise specified）
Parameter
Symbol
Test Condition
Min Type Max Unit
Reverse voltage
VBR
IR =250µA
20
V
IF =0.5A
0
0.37 0.40
V
Forward voltage
VF
IF =1.0A
0
0.42 0.45
V
IF =3.0A
0
0.62 0.75
V
Reverse current
IR
VR =20V
5
50
µA
Diode capacitance
CD
VR=4V, f=1MHz
60
pF
High Diode Semiconductor
1
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