B5817WS 查看數據表（PDF） - Jiangsu High diode Semiconductor Co., Ltd
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B5817WS Datasheet PDF : 4 Pages
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Typical Characteristics
Forward Characteristics
3
Reverse Characteristics
10
1
1
0.1
0.1
0.01
0.01
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
FORWARD VOLTAGE V (V)
F
1E-3
0
T =100℃
a
T =25℃
a
5
10
15
20
25
REVERSE VOLTAGE V (V)
R
200
160
120
80
40
0
0
Capacitance Characteristics
Ta=25℃
f=1MHz
5
10
15
20
REVERSE VOLTAGE V (V)
R
300
250
200
150
100
50
0
0
Power Derating Curve
25
50
75
100
125
AMBIENT TEMPERATURE T (℃)
a
High Diode Semiconductor
2
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