B5818WS_ 查看數據表（PDF） - Galaxy Semi-Conductor
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B5818WS_ Datasheet PDF : 4 Pages
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Production specification
Schottky Barrier Diode
FEATURES
Extremely low VF .
Low stored change,majority carrier
conduction
Low power loss/high efficient.
MSL 1.
APPLICATIONS
Pb
Lead-free
For Use In Low Voltage, High Frequency Inverters.
Free Wheeling, And Polarity Protection Applications.
B5818WS-B5819WS
SOD-323
ORDERING INFORMATION
Type No.
Marking
B5818WS
SK
B5819WS
SL
Package Code
SOD-323
SOD-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Parameter
symbol B5818WS B5819WS Unit
Non-Repetitive Peak reverse voltage
VRM
36
48
V
Peak repetitive Peak reverse voltage
Working Peak Reverse voltage
DC Reverse Voltage
VRRM
VRWM
30
40
V
VR
RMS Reverse Voltage
Average Rectified output Current
Peak forward surge current@=8.3ms
Power Dissipation
Thermal Resistance Junction to Ambient
Junction and Storage Temperature Rage
VR(RMS)
21
28
Io
1
IFSM
10
Pd
235
RθJA
80
TJ,TSTG
-65 to +150
V
A
A
mW
℃/W
℃
B009
Rev.A
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