B5818W_ 查看數據表（PDF） - Galaxy Semi-Conductor

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产品描述 (功能)

生产厂家

B5818W_

Schottky Barrier Diode

Galaxy Semi-Conductor 

Production specification

Schottky Barrier Diode

B5818W-B5819W

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol Test Condition

MIN

Reverse breakdown voltage

V(BR)

Reverse voltage leakage current IR

Forward voltage

VF

IR=1mA

VR=30V

VR=40V

B5818W

B5819W

B5818W 30

B5819W 40

B5818W

B5819W

IF=1A

IF=3A

IF=1A

IF=3A

Diode capacitance

CD

VR=4V,f=1MHz

MAX UNIT

V

1 mA

0.55

0.875

V

0.6

0.9

120

pF

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Case Temperature(℃)

Fig.1 Forward Current Derating Curve

Number of Cycles at 60Hz

Fig.2 Maximum Non-Repetitive Peak Forward

Surge Current

1.0

A006

Rev.A

www.gmesemi.com

2

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