CDBU0230R 查看數據表（PDF） - ComChip

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CDBU0230R

SMD Schottky Barrier Diode

ComChip 

SMD Schottky Barrier Diode

CDBU0230R (Lead-free Device)

Io = 200 mA

VR = 30 Volt s

Features

Low forward Voltage

Designed for mounting on small surface.

Extremely thin/leadless package.

Majority carrier conduction.

Mechanical data

COMCHIP

SMD Diodes Specialist

0603(1608)

0.071(1.80)

0.063(1.60)

0.039(1.00)

0.031(0.80)

Case: SOD-523F (1608) Standard

package , molded plastic.

Terminals: Gold plated, solderable per

MIL-STD-750, method 2026.

Polarity: Indicated by cathode band.

Mounting position: Any.

Weight: 0.003 gram (approximately).

0.014(0.35) Typ.

0.033(0.85)

0.027(0.70)

0.012 (0.30) Typ.

0.018(0.45) Typ.

Dimensions in inches and (millimeter)

Maximum Rating ( at T A = 25 C unless otherwise noted )

Parameter

Conditions

Symbol Min Typ Max Unit

Repetitive peak reverse voltage

Reverse voltage

Average forward rectified current

VRRM

VR

Io

35

V

30

V

200 mA

Forward current , surge peak

8.3 ms single half sine-wave superimposed

on rate load ( JEDEC method )

IFSM

1

A

Storage temperature

Junction temperature

TSTG

-40

Tj

-40

+125 C

+125 C

Electrical Characteristics ( at T A = 25 C unless otherwise noted )

Parameter

Forward voltage

Reverse current

Conditions

I F = 200 mA

VR = 10 V

Symbol Min Typ Max Unit

VF

0.6

V

IR

1

uA

QW-A1027

REV:A

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