AO4406 查看數據表（PDF） - VBsemi Electronics Co.,Ltd

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AO4406

N-Channel 20V (D-S) MOSFET

VBsemi Electronics Co.,Ltd 

AO4406

N-Channel 20V (D-S) MOSFET

www.VBsemi.tw

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)

20

0.012 at VGS = 10 V

0.015 at VGS = 4.5 V

ID (A)a

12

11

Qg (Typ.)

6.1 nC

FEATURES

• Halogen-free

• TrenchFET® Power MOSFET

• Optimized for High-Side Synchronous

Rectifier Operation

• 100 % Rg Tested

• 100 % UIS Tested

S1

S2

S3

G4

SO-8

8D

7D

6D

5D

APPLICATIONS

• Notebook CPU Core

- High-Side Switch

D

G

Top View

S

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

VDS

20

VGS

± 16

V

TC = 25 °C

12

Continuous Drain Current (TJ = 150 °C)

TC = 70 °C

TA = 25 °C

ID

11

10b, c

Pulsed Drain Current

TA = 70 °C

IDM

8b, c

47

A

Continuous Source-Drain Diode Current

TC = 25 °C

TA = 25 °C

IS

3.7

2.0b, c

Single Pulse Avalanche Current

Avalanche Energy

L = 0.1 mH

IAS

20

EAS

21

mJ

TC = 25 °C

4.1

Maximum Power Dissipation

TC = 70 °C

TA = 25 °C

PD

2.5

2.2b, c

W

TA = 70 °C

1.3b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambientb, d

Maximum Junction-to-Foot (Drain)

t ≤ 10 s

Steady State

Notes:

a. Base on TC = 25 °C.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. Maximum under Steady State conditions is 85 °C/W.

Symbol

RthJA

RthJF

Typical

39

25

Maximum

55

29

Unit

°C/W

E-mail：China@VBsemi TEL:86-755-83251052

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