AO4408 查看數據表（PDF） - Unspecified

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AO4408

N-Channel MOSFET uses advanced trench technology

Unspecified 

Description：

This N-Channel MOSFET uses advanced trench technology and

design to provide excellent RDS(on) with low gate charge.

It can be used in a wide variety of applications.

Features：

1) VDS=30V,ID=11A,RDS(ON)<10mΩ@VGS=10V

2) Low gate charge.

3) Green device available.

4) Advanced high cell denity trench technology for ultra low RDS(ON).

5) Excellent package for good heat dissipation.

AO4408

S

S

S

G

D

D

D

D

Absolute Maximum Ratings：(TA=25℃ unless otherwise noted)

Symbol

Parameter

VDS

Drain-Source Voltage

VGS

Gate-Source Voltage

Drain Current – Continuous (T =25℃ )1

A

ID

Drain Current – Continuous (T =100℃ ) 1

A

IDM

Drain Current – Pulsed2

EAS

Single Pulse Avalanche Energy3

IAS

Avalanche Current

4

PD

Power Dissipation (TA=25℃ )

TJ, TSTG Operating and Storage Junction Temperature Range

Thermal Characteristics：

Ratings

30

±20

11

7

36

24.2

22

1.5

-55 to +150

Symbol

Parameter

Max

RƟJC

Thermal Resistance,Junction to Case1

25

RƟJA

Thermal Resistance,Junction to Ambient1

85

Units

V

V

A

mj

A

W

℃

Units

℃/W

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