AO4408 查看數據表（PDF） - VBsemi Electronics Co.,Ltd
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AO4408 Datasheet PDF : 9 Pages
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AO4408
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
0.030
www.VBsemi.tw
10
TJ = 150 °C
1
0.1
0.01
TJ = 25 °C
0.025
0.020
0.015
0.010
0.005
TJ = 125 °C
TJ = 25 °C
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.000
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
2.2
50
2.0
40
1.8
ID = 250 µA
30
1.6
20
1.4
1.2
10
1.0
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
100
Limited by RDS(on)*
0
10- 3 10- 2
10- 1
1
10
100 600
Time (s)
Single Pulse Power, Junction-to-Ambient
100 µA
10
1 ms
1
10 ms
100 ms
0.1
TA = 25 °C
Single Pulse
1s
10 s
DC
BVDSS Limited
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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