MMBT5551DW 查看數據表（PDF） - DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD
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MMBT5551DW Datasheet PDF : 3 Pages
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NPN Silicon Epitaxial Planar Transistors
for high voltage amplifier applications.
Absolute Maximum Ratings (Ta = 25℃)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at Tamb=25℃
Parameter
DC Current Gain
at VCE = 5 V, IC = 1 mA
at VCE = 5 V, IC = 10 mA
at VCE = 5 V, IC = 50 mA
Collector Base Cutoff Current
at VCB = 120 V
Emitter Base Cutoff Current
at VEB = 4 V
Collector Base Breakdown Voltage
at IC = 100 µA
Collector Emitter Breakdown Voltage
at IC = 1 mA
Emitter Base Breakdown Voltage
at IE = 10 µA
Collector Emitter Saturation Voltage
at IC = 10 mA, IB = 1 mA
at IC = 50 mA, IB = 5 mA
Base Emitter Saturation Voltage
at IC = 10 mA, IB = 1 mA
at IC = 50 mA, IB = 5 mA
Gain Bandwidth Product
at VCE = 10 V, IC = 10 mA, f = 100 MHz
Collector Base Capacitance
at VCB = 10 V, f = 1 MHz
MMBT5551DW SOT-363
6
5
4
TR2
TR1
1
2
3
1. Emitter 2. Base 3. Collector
4. Emitter 5. Base 6. Collector
Simplified outline(SOT-363)
Symbol
VCBO
VCEO
VEBO
IC
Ptot
Tj
Tstg
Value
180
160
6
600
200
150
- 55 to + 150
Unit
V
V
V
mA
mW
℃
℃
Symbol
hFE
hFE
hFE
ICBO
IEBO
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCE(sat)
VBE(sat)
fT
Ccbo
Min.
80
80
30
-
-
180
160
6
-
-
-
-
100
-
Max.
-
250
-
50
50
-
-
-
0.15
0.2
1
1
300
6
Unit
-
-
-
nA
nA
V
V
V
V
V
MHz
pF
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Dongguan YFW Electronics Co, Ltd.
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