MMBT3904 查看數據表（PDF） - Bytes

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MMBT3904

TRANSISTOR(NPN)

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MMBT3904

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TRANSISTOR(NPN)

FEATURES

Complementary Type The PNP Transistor MMBT3906 is Recommended

Epitaxial Planar Die Construction

SOT-23

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

Parameter

Value

Unit

VCBO

VCEO

VEBO

IC

PC

RθJA

TJ

Tstg

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Total Device Dissipation

ThermalResistanceFromJunction toAmbient

Junction Temperature

Storage Temperature

60

40

6

200

200

625

150

-55 ~ +150

V

V

V

mA

mW

℃/W

℃

℃

1．BASE

2．EMITTER

3．COLLECTOR

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

Delay Time

Rise Time

Storage Time

Fall Time

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

ICEX

IEBO

hFE(1)

hFE(2)

hFE(3)

VCE(sat)

VBE(sat)

fT

td

tr

ts

tf

IC= 10μA, IE=0

IC= 1mA, IB=0

IE=10μA, IC=0

VCB=60V, IE=0

VCE=30V, VBE(off)=3V

VEB=5V, IC=0

VCE=1V, IC=10mA

VCE=1V, IC= 50mA

VCE=1V, IC= 100mA

IC=50mA, IB= 5mA

IC= 50mA, IB= 5mA

VCE=20V, IC=10mA, f=100MHz

VCC=3V, VBE=-0.5V

IC=10mA, IB1=-IB2=1.0mA

VCC=3V, IC=10mA,

IB1=-IB2=1mA

60

40

6

100

60

30

300

Max

0.1

50

0.1

300

0.3

0.95

35

35

200

50

Unit

V

V

V

μA

nA

μA

V

V

MHz

nS

nS

nS

nS

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