D882 查看數據表（PDF） - Shenzhen Jin Yu Semiconductor Co., Ltd.

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D882

TRANSISTOR (NPN)

Shenzhen Jin Yu Semiconductor Co., Ltd.  

D882

TRANSISTOR (NPN)

FEATURES

Power dissipation

SOT-89

1. BASE

MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

2. COLLECTOR

3. EMITTER

1

2

3

Symbol

VCBO

VCEO

VEBO

IC

PC

TJ

Tstg

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature

Value

40

30

6

3

0.5

150

-55-150

Units

V

V

V

A

W

℃

℃

ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

MIN

TYP

MAX

Collector-base breakdown voltage

V(BR)CBO IC = 100μA, IE=0

40

Collector-emitter breakdown voltage

V(BR)CEO IC = 10mA, IB=0

30

Emitter-base breakdown voltage

V(BR)EBO IE= 100μA, IC=0

6

Collector cut-off current

ICBO

VCB= 40V, IE=0

1

Collector cut-off current

ICEO

VCE= 30V, IB=0

10

Emitter cut-off current

IEBO

VEB= 6V, IC=0

1

DC current gain

hFE(1)

VCE=2V, IC= 1A

60

400

hFE(2)

VCE=2V, IC= 100mA

32

Collector-emitter saturation voltage

VCE(sat)

IC= 2A, IB= 0.2 A

0.5

Base-emitter saturation voltage

VBE(sat)

IC= 2A, IB= 0.2 A

1.5

Transition frequency

VCE= 5V , Ic=0.1A

fT

50

f =10MHz

UNIT

V

V

V

µA

µA

µA

V

V

MHz

CLASSIFICATION OF hFE(1)

Rank

R

Range

60-120

O

100-200

Y

160-320

GR

200-400

１　

JinYu

semiconductor

www.htsemi.com

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