2N4403 查看數據表（PDF） - Unspecified
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2N4403 Datasheet PDF : 6 Pages
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SEMICONDUCTOR
TECHNICAL DATA
2N4403
General Purpose Transistors
PNP Silicon
ORDERING INFORMATION
Device
Marking
2N4403LT1G
2T
Shipping
3000/Tape & Reel
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR –5 Board (1)
T A =25 °C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate (2) T A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
V CEO
V CBO
V EBO
IC
Value
– 40
– 40
– 5.0
– 600
Unit
Vdc
Vdc
Vdc
mAdc
Symbol
PD
R θJA
PD
R θJA
T J , T stg
Max
Unit
225
mW
1.8
mW/°C
556
°C/W
300
mW
2.4
417
–55 to +150
mW/°C
°C/W
°C
3
2
1
SOT–23
1
BASE
3
COLLECTOR
2
EMITTER
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (3)
(I C = –1.0 mAdc, I B = 0)
Collector–Base Breakdown Voltage
(I C = –0.1mAdc, I E = 0)
Emitter–Base Breakdown Voltage
(I E = –0.1mAdc, I C = 0)
Base Cutoff Current
(V CE = –35 Vdc, V EB = –0.4 Vdc)
Collector Cutoff Current
(V CE = –35 Vdc, V EB = –0.4 Vdc)
V (BR)CEO
V (BR)CBO
V (BR)EBO
I BEV
I CEX
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width <300 µs; Duty Cycle <2.0%.
Min
– 40
– 40
– 5.0
—
—
Max
Unit
—
—
—
– 0.1
– 0.1
Vdc
Vdc
Vdc
µAdc
µAdc
2008. 08. 08
Revision No : 0
1/6
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