2N4403 查看數據表（PDF） - Diotec Semiconductor Germany
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2N4403 Datasheet PDF : 2 Pages
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General Purpose Transistors
2N4402, 2N4403
Characteristics (Tj = 25°C)
DC current gain – Kollektor-Basis-Stromverhältnis
- VCE = 1 V, - IC = 0.1 mA
- VCE = 1 V, - IC = 1 mA
- VCE = 1 V, - IC = 10 mA
- VCE = 1 V, - IC = 150 mA
- VCE = 1 V, - IC = 500 mA
2N4403 hFE
2N4402 hFE
2N4403 hFE
2N4402 hFE
2N4403 hFE
2N4402 hFE
2N4403 hFE
2N4402 hFE
2N4403 hFE
h-Parameters at - VCE = 10 V, - IC = 1 mA, f = 1 kHz
Small signal current gain
2N4402 hfe
Kleinsignal-Stromverstärkung 2N4403 hfe
Input impedance
Eingangs-Impedanz
2N4402 hie
2N4403 hie
Output admittance – Ausgangs-Leitwert
hoe
Reverse voltage ratio – Spannungsrückwirkg. hre
Gain-Bandwidth Product – Transitfrequenz
- VCE = 10 V, - IC = 20 mA,
f = 100 MHz
2N4402 fT
2N4403 fT
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- VCB = 10 V, - IE = ie = 0, f = 1 MHz
CCB0
Emitter-Base Capacitance – Emitter-Basis-Kapazität
VEB = 2 V, IC = ic = 0, f = 1 MHz
CEB0
Switching times – Schaltzeiten
turn-on time
delay time
rise time
turn-off time
storage time
fall time
ton
- ICon = 150 mA
- IBon = 15 mA
IBoff = 15 mA
td
tr
toff
ts
tf
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
30
–
–
30
–
–
60
–
–
50
–
–
100
–
–
50
–
150
100
–
300
20
–
–
20
–
–
30
–
60
–
0.75 kS
–
1.5 kS
–
1 µS
–
0.1 *10-4
–
250
500
7.5 kS
15 kS
100 µS
8 *10-4
150 MHz
–
–
200 MHz
–
–
–
–
8.5 pF
–
–
30 pF
–
–
35 ns
–
–
15 ns
–
–
20 ns
–
–
255 ns
–
–
225 ns
–
–
30 ns
RthA
200 K/W 1)
2N4400, 2N4401
1) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
37
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