2SD667(A)
Electrical Characteristics @ TA=25°C Unless Otherwise Specified
Parameter
Symbol Min Typ Max
Collector-Base Breakdown Voltage
V(BR)CBO 120
Collector-Emitter
Breakdown Voltage
2SD667
80
2SD667A V(BR)CEO 100
Emitter-Base Breakdown Voltage
V(BR)EBO
5
Collector-Base Cutoff Current
ICBO
10
Emitter-Base Cutoff Current
IEBO
10
DC Current Gain
hFE(1)
60
hFE(2)
30
320
Collector-Emitter Saturation Voltage
VCE(sat)
1.0
Base-Emitter Voltage
VBE
1.5
Transition Frequency
fT
140
Collector-Base Capacitance
Ccb
12
Units
Conditions
V IC=10µA, IE=0
V IC=1mA, IB=0
V
µA
µA
V
V
MHz
pF
IE=10µA, IC=0
VCB=100V, IE=0
VEB=4V, IC=0
VCE=5V, IC=150mA
VCE=5V, IC=-500mA
IC=500mA, IB=50mA
VCE=5V, IC=150mA
VCE=5V, IC=150mA
VCB=10V, IE=0,f=1MHz
Classification of hFE
Rank
Range
B
60-120
C
100-200
D
160-320
Rev.3-1-01012019
2/4
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