BAV23 查看數據表（PDF） - Unspecified

零件编号

产品描述 (功能)

生产厂家

BAV23

Silicon Epitaxial Planar Diodes

Unspecified 

Features

High voltage switching diode

BAV23

3

BAV23SE

3

BAV23CC

3

BAV23CA

3

12

12

12

12

BAV23 / SE / CC / CA

Silicon Epitaxial Planar Diodes

SOT-23

3

1

2

BAV23

BAV23SE

BAV23CC

BAV23CA

Marking: HC

Marking: PY

Marking: PZ

Marking: RA

Absolute Maximum Ratings (Ta = 25 OC)

Parameter

Maximum Repetitive Reverse Voltage

Reverse Voltage

Forward Current

Repetitive Peak Forward Current

Non-repetitive Peak Forward Surge Current

Power Dissipation

at t = 10 ms

at t = 100 μs

at t = 1 μs

Thermal Resistance Junction to Ambient Air

Operating Junction and Storage Temperature Range

Symbol

VRRM

VR

IF(AV)

IFRM

IFSM

Ptot

RθJA

Tj, Tstg

Value

250

200

400

625

1.7

3

9

350

357

- 65 to + 150

Units

V

V

mA

mA

A

mW

OC/W

OC

Characteristics at Ta = 25 OC

Parameter

Reverse Breakdown Voltage

at IR = 100 µA

Forward Voltage

at IF = 100 mA

at IF = 200 mA

Reverse Current

at VR = 200 V, Tj = 25 OC

at VR = 200 V, Tj = 150 OC

Total Capacitance

at VR = 0 V, f = 1 MHz

Reverse Recovery Time

at IF = IR = 30 mA, Irr = 0.1 X IR, RL = 100 Ω

Symbol

Min.

Max.

Unit

V(BR)R

250

-

V

VF

-

1

V

-

1.25

IR

-

100

nA

-

100

µA

Ctot

-

5

pF

trr

-

50

ns

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Revision：1.0 Jun-2018

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