DS35W 查看數據表（PDF） - Zibo Seno Electronic Engineering Co.,Ltd

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DS35W

3.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE

Zibo Seno Electronic Engineering Co.,Ltd 

Z ibo Seno Electronic Engineering Co., Ltd.

DS32W – DS320W

3.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE

Features

! Schottky Barrier Chip

! Ideally Suited for Automatic Assembly

! Low Power Loss, High Efficiency

! Surge Overload Rating to 2 0A Peak

! For Use in Low Voltage Application

! Guard Ring Die Construction

! Plastic Case Material has UL Flammability

SOD - 123FL

Cathode Band

Top View

Classification Rating 94V-O

2
.8±
0
.1

Mechanical Data

! Case: SOD-123, Molded Plastic

! Terminals: Solder Plated, Solderable

per MIL-STD-750, Method 2026

! Polarity: Cathode Band or Cathode Notch

! Marking: Type Number

! Weight: 0.01 grams (approx.)

! Lead Free: For RoHS / Lead Free Version

0.6±0.25

3.7±0.2

Dimensions in millimeters

Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified

Characteristic

Symbol DS32W DS33W DS34W DS35W DS36W DS38W DS310W DS315W DS320W Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

RMS Reverse Voltage

VRRM

VRWM

20

30

40

50

60

80

100 150 200

V

VR

VR(RMS)

14

21

28

35

42

56

70 105 140

V

Average Rectified Output Current @TL = 75°C

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load (JEDEC Method)

Forward Voltage

@IF = 3.0A

Peak Reverse Current

@TA = 25°C

At Rated DC Blocking Voltage @TA = 100°C

Typical Thermal Resistance (Note 1)

Typical Junction Capacitance

IO

IFSM

VFM

IRM

R
JL

R
JA

Cj

3.0

A

80

A

0.55

0.70

0.5

10

28

40

250

0.85

0.95

0.3

5

160

V

mA

°C/W

pF

Operating Temperature Range

Tj

-65 to +125

°C

Storage Temperature Range

TSTG

-65 to +150

°C

Note: 1. Mounted on P.C. Board with 5.0mm2 copper pad area.

DS32W – DS320W

1 of 2

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