RB551V-30(2011) 查看數據表（PDF） - ROHM Semiconductor
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RB551V-30 Datasheet PDF : 4 Pages
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RB551V-30
Data Sheet
1000
Ta=125℃
100 Ta=75℃
10
1
Ta=25℃
Ta=-25℃
100000
10000
1000
100
10
1
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
0.1
0
100 200 300 400 500 600
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
0.1
0
10
20
30
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
100
f=1MHz
10
1
0
10
20
30
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
450
200
80
Ta=25℃
180
IF=500mA
Ta=25℃
VR=20V
440
n=30pcs
160
n=30pcs
70
140
430
120
100
60
420
80
60
50
410
40
AVE:420.4mV
400
20
AVE:42.7uA
0
40
Ta=25℃
f=1MHz
VR=0V
n=10pcs
AVE:59.5pF
VF DISPERSION MAP
IR DISPERSIPN MAP
Ct DISPERSION MAP
20
100
100
Ifsm
1cyc
15
8.3ms
Ifsm
8.3ms 8.3ms
1cyc
10
10
10
Ifsm
t
5
AVE:8.60A
0
IFSM DISPERSION MAP
1
1
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
1
0.1
1
10
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
1000
100
10
Rth(j-a)
Rth(j-c)
Mounted on epoxy board
IM=1mA
IF=10mA
1ms time
300us
0.5
0.4
D=1/2
DC
0.3 Sin(θ＝180)
0.2
0.1
0.5
0.4
0.3
0.2
Sin(θ＝180)
D=1/2
0.1
DC
1
0
0
0.001
0.1
10
1000
0
0.2 0.4 0.6 0.8
1
0
TIME:t(s)
Rth-t CHARACTERISTICS
AVERAGE RECTIFIED
FORWARD CURRENT Io(A)
Io-Pf CHARACTERISTICS
5
10
15
20
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
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2011.05 - Rev.C
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