CHDTA124GKPT 查看數據表（PDF） - CHENMKO CO., LTD.

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CHDTA124GKPT

SURFACE MOUNT PNP Digital Silicon Transistor

CHENMKO CO., LTD. 

RATING CHARACTERISTIC ( CHDTA124GKPT )

CHARA CTERISTICS

Tamb = 25 °C unless otherwise speciÞed.

SY MBOL

PARAMETER

CONDITIONS

MIN.

BVCBO

BVCEO

BVEBO

VCE(sat)

ICBO

IEBO

hFE

R1

fT

Collector-Base breakdown voltage IC= -50uA

Collector-Emitter breakdown voltage IC= -1mA

Emitter-Base breakdown voltage IE= -330uA

Collector-Emitter Saturation voltage IC= -10mA; IB= -0.5mA

Collector-Base current

VCB= -50V

Emitter-Base current

VEB= -4V

DC current gain

IC= -5mA; VCE= -5.0V

Input resistor

Transition frequency

IE=5mA, VCE= -10.0V

f==100MHz

-50.0

-50.0

-5.0

−

−

−

56

15.4

−

TY P . MAX.

−

−

−

−

−

−

−

-0.3

−

-0.5

−

-260

−

−

22

28.6

250

−

UNIT

V

V

V

V

uA

uA

KΩ

MHz

Not e

1.Pulse test: tp≤300uS; δ ≤0.02.

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