CMT08N50(2003) 查看數據表（PDF） - Champion Microelectronic
零件编号
产品描述 (功能)
生产厂家
CMT08N50 Datasheet PDF : 7 Pages
| |||
CMT08N50
POWER FIELD EFFECT TRANSISTOR
ORDERING INFORMATION
Part Number
CMT08N50N220
CMT08N50N220FP
Package
TO-220
TO-220 Full Package
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, TJ = 25℃.
Characteristic
Drain-Source Breakdown Voltage
(VGS = 0 V, ID = 250 μA)
Drain-Source Leakage Current
(VDS = 500 V, VGS = 0 V)
(VDS = 400 V, VGS = 0 V, TJ = 125℃)
Gate-Source Leakage Current-Forward
(Vgsf = 20 V, VDS = 0 V)
Gate-Source Leakage Current-Reverse
(Vgsr = 20 V, VDS = 0 V)
Gate Threshold Voltage
(VDS = VGS, ID = 250 μA)
Static Drain-Source On-Resistance (VGS = 10 V, ID = 4.0A) *
Drain-Source On-Voltage (VGS = 10 V)
(ID = 8.0 A)
Forward Transconductance (VDS = 50 V, ID = 4.0A) *
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 V, VGS = 0 V,
f = 1.0 MHz)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
(RGo + C17n = 9.1Ω) *
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
(VDS = 400 V, ID = 8.0 A,
VGS = 10 V)*
Internal Drain Inductance
(Measured from the drain lead 0.25” from package to center of die)
Internal Drain Inductance
(Measured from the source lead 0.25” from package to source bond pad)
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage(1)
Forward Turn-On Time
Reverse Recovery Time
(IS = 8.0 A, VGS = 0 V,
dIS/dt = 100A/µs)
* Pulse Test: Pulse Width ≦300µs, Duty Cycle ≦2%
** Negligible, Dominated by circuit inductance
Symbol
V(BR)DSS
IDSS
IGSSF
IGSSR
VGS(th)
RDS(on)
VDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
LD
LS
CMT08N50
Min
Typ
Max
500
Units
V
μA
25
250
100
nA
100
nA
2.0
4.0
V
0.8
Ω
5.0
7.2
V
4.9
mmhos
1450
1680
pF
190
246
pF
45.4
144
pF
15
50
ns
33
72
ns
40
150
ns
32
60
ns
40
64
nC
8.0
nC
17
nC
4.5
nH
7.5
nH
VSD
1.5
V
ton
**
ns
trr
320
ns
2003/03/31 Preliminary Rev. 1.0
Champion Microelectronic Corporation
Page 2
Share Link: 