CHM6031LPAPT 查看數據表（PDF） - CHENMKO CO., LTD.

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CHM6031LPAPT

SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor

CHENMKO CO., LTD. 

RATING CHARACTERISTIC CURVES ( CHM6031LPAPT )

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter

Conditions

Min Typ Max Units

OFF CHARACTERISTICS

BVDSS Drain-Source Breakdown Voltage

IDSS

Zero Gate Voltage Drain Current

I GSSF

I GSSR

Gate-Body Leakage

Gate-Body Leakage

VGS = 0 V, ID = 250 µA

VDS = 24 V, VGS = 0 V

VGS = 20V,VDS = 0 V

VGS = -20V, VDS = 0 V

30

V

1

µA

+100 nA

-100 nA

ON CHARACTERISTICS (Note 2)

VGS(th) Gate Threshold Voltage

RDS(ON) Static Drain-Source On-Resistance

g FS

Forward Transconductance

VDS = VGS, ID = 250 µA

VGS=10V, ID=5A

VGS=4.5V, ID=5A

VDS =10V, ID = 26A

1 1.6 3

V

8.5 11

mΩ

12 15

32

S

SWITCHING CHARACTERISTICS (Note 4)

Qg Total Gate Charge

Qgs Gate-Source Charge

Q gd Gate-Drain Charge

t on

Turn-On Time

tr

Rise Time

t off

Turn-Off Time

tf

Fall Time

VDS=24V, ID=48A

VGS=5V

VDD= 15V

ID =55A, VGS= 10 V

RGEN= 24 Ω

27 33

6

nC

14

10 16

190 250

nS

55 90

130 200

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

IS

Drain-Source Diode Forward Current

V SD

Drain-Source Diode Forward Voltage IS = 26A, VGS= 0 V

55

A

0.93 1.3 V

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