IXBK64N250 查看數據表（PDF） - IXYS CORPORATION

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产品描述 (功能)

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IXBK64N250

High Voltage, High Gain BiMOSFET Monolithic Bipolar MOS Transistor

IXYS CORPORATION 

1

0.1

0.01

0.001

0.00001

Fig. 19. Maximum Transient Thermal Impedance

0.0001

0.001

0.01

0.1

Pulse Width - Seconds

IXBK64N250

IXBX64N250

1

10

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYS REF: B_64N250(9P)8-12-11B

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