IXBF20N300 查看數據表（PDF） - IXYS CORPORATION
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IXBF20N300 Datasheet PDF : 5 Pages
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Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
Min.
Typ. Max.
gfS
IC = 20A, VCE = 10V, Note 1
11
18
S
Cies
Coes
Cres
VCE = 25V, VGE = 0V, f = 1MHz
2230
pF
92
pF
33
pF
Qg
Qge
IC = 20A, VGE = 15V, VCE = 1000V
Qgc
105
nC
13
nC
45
nC
td(on)
tr
td(off)
tf
Resistive Switching Times, TJ = 25°C
IC = 20A, VGE = 15V
VCE = 1250V, RG = 10Ω
64
210
300
504
ns
ns
ns
ns
td(on)
tr
td(off)
tf
Resistive Switching Times, TJ = 125°C
IC = 20A, VGE = 15V
VCE = 1250V, RG = 10Ω
68
540
300
395
ns
ns
ns
ns
RthJC
RthCS
0.83 °C/W
0.15
°C/W
IXBF20N300
ISOPLUS i4-PakTM (HV) Outline
Pin 1 = Gate
Pin2 = Emitter
Pin 3 = Collector
Tab 4 = Isolated
Reverse Diode
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
VF
IF = 20A, VGE = 0V
trr
IF = 10A, VGE = 0V, -diF/dt = 100A/μs
IRM
VR = 100V, VGE = 0V
Characteristic Values
Min. Typ. Max.
2.1 V
1.35
μs
30
A
Notes:
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Device must be heatsunk for high temperature leakage current
measurements to avoid thermal runaway.
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
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