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IXBT20N360HV 查看數據表(PDF) - IXYS CORPORATION

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IXBT20N360HV Datasheet PDF : 6 Pages
1 2 3 4 5 6
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
gfs
IC = 20A, VCE = 10V, Note 1
Cies
Coes
Cres
VCE = 25V, VGE = 0V, f = 1MHz
Qg(on)
Qge
Qgc
IC = 20A, VGE = 15V, VCE = 1000V
td(on)
tri
Inductive load, TJ = 25°C
Eon
IC = 20A, VGE = 15V
td(off)
VCE = 1500V, RG = 10
tfi
Note 2
Eoff
td(on)
tri
Inductive load, TJ = 125°C
Eon
IC = 20A, VGE = 15V
td(off)
VCE = 1500V, RG = 10
tfi
Note 2
Eoff
td(on)
tr
td(off)
tf
Resistive load, TJ = 25°C
IC = 20A, VGE = 15V
VCE = 960V, RG = 10
td(on)
tr
td(off)
tf
Resistive load, TJ = 125°C
IC = 20A, VGE = 15V
VCE = 960V, RG = 10
RthJC
RthCS
TO-247HV
Reverse Diode
1
Characteristic Values
Min.
Typ. Max.
10
17
S
2045
pF
110
pF
50
pF
110
nC
13
nC
43
nC
18
ns
14
ns
15.50
mJ
238
ns
206
ns
4.30
mJ
20
ns
22
ns
16.10
mJ
247
ns
216
ns
4.15
mJ
30
ns
325
ns
165
ns
1045
ns
32
ns
890
ns
185
ns
1100
ns
0.29°C/W
0.21
°C/W
IXBT20N360HV
IXBH20N360HV
TO-268HV Outline
E
A
E1
L2 C2
3
D
H
1
2
L4
ee
A1
C
D2
2
3
D1
1
D3
b
PINS:
1 - Gate 2 - Emitter
3 - Collector
L3
A2
L
TO-247HV Outline
E
A
R
0P
A2
QS
D
12
D3
3
L1
A3
2X
L
A1
E1
0P1
D1
4
D2
E2
E3
4X
e
e1
c
b
3X
PINS:
b1
3X
1 - Gate 2 - Emitter
3, 4 - Collector
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max
VF
IF = 20A, VGE = 0V, Note 1
3.5 V
trr
IRM
IF = 10A, VGE = 0V, -diF/dt = 100A/μs
QRM
VR = 100V, VGE = 0V
1.7
μs
35
A
30
μC
Note: 1. Pulse test, t 300μs, duty cycle, d 2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experience,
and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to
change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537

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