2SC5342SF 查看數據表（PDF） - Kodenshi Auk Co., LTD
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2SC5342SF Datasheet PDF : 4 Pages
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2SC5342SF
NPN Silicon Transistor
Description
• Medium power amplifier
PIN Connection
Features
• Large collector current : IC=500mA
• Low collector saturation voltage enabling
low-voltage operation
• Complementary pair with 2SA1979SF
1
2
3
SOT-23F
Ordering Information
Type NO.
2SC5342SF
Marking
BA
① ②③
①Device Code ②hFE Rank ③Year&Week Code
Package Code
SOT-23F
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Ratings
40
32
5
500
200
150
-55~150
(Ta=25°C)
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
Characteristic
Symbol
Test Condition
Collector-Base breakdown voltage
BVCBO IC=100μA, IE=0
Collector-Emitter breakdown voltage BVCEO IC=1mA, IB=0
Emitter-Base breakdown voltage
BVEBO IE=10μA, IC=0
Collector cut-off current
ICBO
VCB=40V, IE=0
Emitter cut-off current
DC current gain
Collector-Emitter saturation voltage
IEBO
hFE*
VCE(sat)
VEB=5V, IC=0
VCE=1V, IC=100mA
IC=100mA, IB=10mA
Transition frequency
fT
VCE=6V, IC=20mA
Collector output capacitance
Cob
VCB=6V, IE=0, f=1MHz
* : hFE Rank / O : 70~140, Y : 120~240
KSD-T5C049-001
(Ta=25°C)
Min. Typ. Max. Unit
40
-
-
V
32
-
-
V
5
-
-
V
-
-
0.1
μA
-
-
0.1
μA
70
-
240
-
-
-
0.25
V
-
300
-
MHz
-
7.0
-
pF
1
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