H11A2M-G 查看數據表（PDF） - CT Micro International Corporation
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H11A2M-G Datasheet PDF : 14 Pages
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4N25, 4N26, 4N27, 4N28, 4N35, 4N36, 4N37, 4N38
H11A1, H11A2, H11A3, H11A4, H11A5
DC Input 6-Pin Phototransistor Optocoupler
Absolute Maximum Rating at 25oC
Symbol
Parameters
VISO Isolation voltage
TOPR Operating temperature
TSTG Storage temperature
TSOL Soldering temperature
Emitter
IF
Forward current
IF(TRANS) Peak transient current (≤1µs P.W,300pps)
VR
Reverse voltage
PD
Power dissipation
Detector
PD
Power dissipation
BVCEO Collector-Emitter Breakdown Voltage
BVCBO Collector-Base Breakdown Voltage
BVECO Emitter-Collector Breakdown Voltage
BVEBO Emitter-Base Breakdown Voltage
Ratings
5000
-55 ~ +110
-55 ~ +150
260
60
1
6
100
150
80
80
7
7
Units
VRMS
oC
oC
oC
Notes
mA
A
V
mW
mW
V
V
V
V
CT Micro
Proprietary & Confidential
Page 2
Rev 2
Apr, 2016
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