JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
A92 TRANSISTOR( PNP )
FEATURES
TO— 92
Power dissipation
PCM : 0.625W(Tamb=25℃)
Collector current
ICM: -0.5 A
Collector-base voltage
V(BR)CBO : -300V
Operating and storage junction temperature range
TJ,Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless
1.EMITTER
2.BASE
3.COLLECTOR
otherwise
123
specified)
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
Ic= -100μA,IE=0
-300
V
Collector-emitter breakdown voltage V(BR)CEO Ic= -1 mA, IB=0
-300
V
Emitter-base breakdown voltage
V(BR)EBO
IE= -100μA, IC=0
-5
Collector cut-off current
ICBO
VCB= -200 V IE=0
V
-0.25 μA
Emitter cut-off current
IEBO
VEB= -5 V, IC=0
-0.1 μA
hFE(1)
VCE= -10 V, IC=- 1 mA
60
DC current gain
hFE(2)
VCE= -10V, IC = -10 mA
80
250
hFE(3)
VCE= -10 V, IC= -80 mA
60
Collector-emitter saturation voltage
VCE(sat)
IC= -20 mA, IB= -2 mA
-0.2 V
Base-emitter saturation voltage
Transition frequency
VBE(sat)
fT
IC= -20 mA, IB= -2 mA
VCE= -20 V, IC= -10 mA
f = 30MHz
50
-0.9 V
MHz
CLASSIFICATION OF hFE(2)
Rank
A
Range
80-100
B1
100-150
B2
150-200
C
200-250