2N7002 查看數據表（PDF） - Diotech Company.
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2N7002 Datasheet PDF : 3 Pages
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2N7002
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Voltage - 60 Volts Drain Curreent - 115 mAmps
● ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
Characteristic
Symbol
Min
● OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 10µAdc)
V (BR)DSS
60
Zero Gate Voltage Drain Current
(VGS = 0, VDS = 60 Vdc)
TJ = 25 °C
TJ = 125 °C
IDSS
–
–
Gate–Body Leakage Current, Forward
(VGS = 20 Vdc)
IGSSF
–
Gate–Body Leakage Current, Reverse
(VGS = – 20 Vdc)
IGSSR
–
● ON CHARACTERISTICS (Note 2.)
Gate ThresholdVoltage
(VDS = VGS, ID = 250µAdc)
V GS(th)
1.0
On–State Drain Current
(VDS ≥ 2.0 VDS(on), VGS = 10 Vdc)
Static Drain–Source On–State Voltage
(VGS = 10 Vdc, ID = 500 mAdc)
(VGS = 5.0 Vdc, ID = 50 mAdc)
Static Drain–Source On–State Resistance
(VGS = 10 V, ID= 500 mAdc) TC= 25°C
TC = 125°C
(VGS = 5.0 Vdc,ID = 50 mAdc) TC = 25°C
TC = 125°C
ID(on)
V DS(on)
rDS(on)
500
–
–
–
–
–
–
Forward Transconductance
(VDS ≥ 2.0 VDS(on), ID = 200 mAdc)
g FS
80
● DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
C iss
–
Output Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
C oss
–
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
C rss
–
● SWITCHING CHARACTERISTICS (Note 2.)
Turn–On Delay Time
Turn–Off Delay Time
(V DD = 25 Vdc , ID 500 mAdc,
RG = 25 Ω, RL = 50 Ω, Vgen = 10 V)
t d(on)
–
t d(off)
–
● BODY–DRAIN DIODE RATINGS
Diode Forward On–Voltage
(IS = 115 mAdc, VGS = 0 V)
V SD
–
Source Current Continuous
(Body Diode)
IS
–
Source Current Pulsed
2. Pulse Test: Pulse Width ≤300 µs, Duty Cycle ≤2.0%.
ISM
–
Typ
Max
Unit
–
–
Vdc
–
1.0 µAdc
–
500
–
1
µAdc
–
-1
µAdc
1.6
2
Vdc
–
–
mA
Vdc
–
3.75
–
0.375
Ohms
1.4
7.5
–
13.5
1.8
7.5
–
13.5
–
–
mmhos
17
50
pF
10
25
pF
2.5
5.0
pF
7
20
ns
11
40
ns
–
–1.5 Vdc
–
–115 mAdc
–
–800 mAdc
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