2N7002 查看數據表（PDF） - SHENZHEN YONGERJIA INDUSTRY CO.,LTD

零件编号

产品描述 (功能)

生产厂家

2N7002

MOSFET (N-Channel)

SHENZHEN YONGERJIA INDUSTRY CO.,LTD 

RoHS

2N7002

2N7002 MOSFET (N-Channel)

FEATURES

z High density cell design for low RDS(ON)

z Voltage controlled small signal switch

z Rugged and reliable

z High saturation current capability

SOT-23

1. GATE

2. SOURCE

3. DRAIN

Marking: 7002

MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Symbol

Parameter

Value

Units

VDS

Drain-Source voltage

60

V

ID

Drain Current

115

mA

PD

Power Dissipation

225

mW

RӨJA

Thermal Resistance, junction to Ambient

556

℃/W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55-150

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Drain-Source Breakdown Voltage

Gate-Threshold Voltage

Gate-body Leakage

Zero Gate Voltage Drain Current

On-state Drain Current

Drain-Source On-Resistance

Forward Trans conductance

Drain-source on-voltage

Diode Forward Voltage

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

SWITCHING TIME

Turn-on Time

Turn-off Time

Symbol

Test conditions

V(BR)DSS

Vth(GS)

lGSS

IDSS

ID(ON)

rDS(0n)

gfs

VDS(on)

VSD

Ciss

COSS

CrSS

VGS=0 V, ID=10 μA

VDS=VGS, ID=250 μA

VDS=0 V, VGS=±25 V

VDS=60 V, VGS=0 V

VGS=10 V, VDS=7 V

VGS=10 V, ID=500mA

VGS=5 V, ID=50mA

VDS=10 V, ID=200mA

VGS=10V, ID=500mA

VGS=5V, ID=50mA

IS=115mA, VGS=0 V

VDS=25V, VGS=0V, f=1MHz

td(on)

td(off)

VDD=25 V, RL=50Ω

ID=500mA,VGEN=10 V

RG=25 Ω

MIN

60

1

500

1

1

80

0.5

0.05

0.55

TYP MAX UNIT

V

2.5

±80

nA

80

nA

mA

7.5

Ω

7.5

500

ms

3.75

V

0.375

V

1.2

V

50

25

pF

5

20

ns

40

WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.com

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