2N7000 查看數據表（PDF） - Jiangsu Changjiang Electronics Technology Co., Ltd
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2N7000 Datasheet PDF : 5 Pages
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate MOSFETS
2N7000 MOSFET (N-Channel)
V(BR)DSS
60 V
RDS(on)MAX
5Ω@10V
6Ω@4.5V
ID
200mA
TO-92
1. SOURCE
2. GATE
3. DRAIN
FEATURE
z High density cell design for low RDS(ON)
z Voltage controlled small signal switch
z Rugged and reliable
z High saturation current capability
MARKING
APPLICATION
z Load Switch for Portable Devices
z DC/DC Converter
Equivalent Circuit
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Continuous Drain Current
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
VDS
ID
PD
RθJA
TJ
Tstg
Value
60
0.2
0.625
200
150
-55 ~+150
Unit
V
A
W
℃/W
℃
www.cj-elec.com
1
E,Aug,2016
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