CHM04N6NPT 查看數據表（PDF） - CHENMKO CO., LTD.

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CHM04N6NPT

SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor

CHENMKO CO., LTD. 

RATING CHARACTERISTIC CURVES ( CHM04N6NPT )

Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter

Conditions

Min Typ Max Units

OFF CHARACTERISTICS

BVDSS Drain-Source Breakdown Voltage

IDSS

Zero Gate Voltage Drain Current

I GSSF

I GSSR

Gate-Body Leakage

Gate-Body Leakage

VGS = 0 V, ID = 250 µA

VDS = 600 V, VGS = 0 V

VGS = 30V,VDS = 0 V

VGS = -30V, VDS = 0 V

600

V

25 µA

+100 nA

-100 nA

ON CHARACTERISTICS (Note 2)

VGS(th) Gate Threshold Voltage

VDS = VGS, ID = 250 µA

RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=2A

g FS

Forward Transconductance

VDS =40V, ID = 2A

2

4

V

2.2 2.5 Ω

2.8

S

SWITCHING CHARACTERISTICS (Note 4)

Qg Total Gate Charge

Qgs Gate-Source Charge

Q gd Gate-Drain Charge

t on

Turn-On Time

tr

Rise Time

t off

Turn-Off Time

tf

Fall Time

VDS=480V, ID=4A

VGS=10V

VDD= 300V

ID = 4A, VGS= 10 V

RGEN= 25Ω

24 31

4

nC

11

25 50

65 120 nS

75 150

65 120

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

IS

Drain-Source Diode Forward Current (Note 1)

V SD

Drain-Source Diode Forward Voltage IS = 2.5A, VGS= 0 V(Note 2)

4

A

1.6 V

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