Philips Semiconductors
MMIC variable gain amplifier
Preliminary specification
BGA2031
FEATURES
• High gain
• Excellent adjacent channel power rejection
• Small SMD package
• Low dissipation.
APPLICATIONS
• General purpose variable gain amplifier for low voltage
and medium power
• Driver for power amplifiers in systems that require good
linearity, such as CDMA, both cellular band (850 MHz)
and PCS (1.9 GHz). This is because of the high output
power and good linearity.
PINNING
PIN
1
2
3
4
5
DESCRIPTION
RF in
CTRL
VS1
VS2 + RF out
GND
handbook, halfpage
5
4
VS1
RFin
VS2+RFout
GND
DESCRIPTION
Silicon Monolitic Microwave Integrated Circuit (MMIC)
2 stage variable gain amplifier in double polysilicon
technology in a 5-pin SOT551A plastic SMD package for
low voltage medium power applications.
1
23
CTRL
Top view
Marking code: G1.
BIAS
CIRCUIT
MAM429
Fig.1 Simplified outline (SOT551A) and symbol.
QUICK REFERENCE DATA
SYMBOL
VS1, VS2
IS
PARAMETER
supply voltages
supply current into pin 3 + pin 4
PL
ACPR
Gp
∆G
load power
adjacent channel power rejection
power gain
gain control range
CONDITIONS
VCTRL = 0
VCTRL = 2.7 V; VS = 3.6 V
VCTRL = 2.4 V; VS = 3 V
at 1 dB gain compression point;
f = 1.9 GHz
f = 1.9 GHz; PL = 12 dBm
f = 836 MHz; PL = 8 dBm
f = 1.9 GHz; PL = 12 dBm
f = 836 MHz; PL = 8 dBm
f = 836 MHz; PL = 8 dBm
TYP.
3.6
0
51
30
13.5
MAX.
4.1
−
63
37
−
UNIT
V
µA
mA
mA
dBm
48
−
dBc
55
−
dBc
26
−
dB
27
−
dB
70
−
dB
1999 Jul 23
2