LS310 查看數據表（PDF） - Linear Integrated System
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LS310 Datasheet PDF : 2 Pages
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Linear Integrated Systems
LS310 LS311 LS312 LS313
MONOLITHIC DUAL
NPN
TRANSISTORS
FEATURES
VERY HIGH GAIN
TIGHT VBE MATCHING
HIGH fT
hFE ≥ 200 @ 10µA-1mA
|VBE1-VBE2| = 0.2mV TYP.
250MHz TYP. @ 1mA
ABSOLUTE MAXIMUM RATINGS NOTE 1
@ 25°C (unless otherwise noted)
IC
Collector Current
10mA
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
-65° to +200°C
+150°C
Maximum Power Dissipation
Device Dissipation @ Free Air
Linear Derating Factor
ONE SIDE
250mW
2.3mW/°C
BOTH SIDES
500mW
4.3mW/°C
C1
C2
B1 E1 E2 B2
26 X 29 MILS
E1
3
B1 2
1
C1
E2
5
6 B2
7
C2
BOTTOM VIEW
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL CHARACTERISTICS
LS310 LS311 LS312 LS313
UNITS CONDITIONS
BVCBO
BVCEO
BVEBO
BVCCO
hFE
Collector to Base Voltage
Collector to Emitter Voltage
Emitter-Base Breakdown Voltage
Collector to Collector Voltage
DC Current Gain
25
45
25
45
6.2 6.2
30
100
150 150
60 45 MIN. V
60 45 MIN. V
6.2 6.2 MIN. V
100 100 MIN. V
200 400 MIN.
1000 MAX.
IC = 10µA
IC = 10µA
IE = 10µA
IC = 10µA
IC = 10µA
IE = 0
IB = 0
IC = 0 NOTE 2
IE = 0
VCE = 5V
hFE
DC Current Gain
hFE
DC Current Gain
VCE(SAT) Collector Saturation Voltage
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
COBO
Output Capacitance
CC1C2 Collector to Collector Capacitance
IC1C2
Collector to Collector Leakage Current
fT
Current Gain Bandwidth Product
NF
Narrow Band Noise Figure
150
150
0.25
0.2
0.2
2
2
0.5
200
3
150
150
0.25
0.2
0.2
2
2
0.5
200
3
200
200
0.25
0.2
0.2
2
2
0.5
200
3
400
400
0.25
0.2
0.2
2
2
0.5
200
3
MIN.
MIN.
MAX.
MAX.
MAX.
MAX.
MAX.
MAX.
MIN.
MAX.
V
nA
nA
pF
pF
nA
MHz
dB
IC = 100µA VCE = 5V
IC = 1mA VCE = 5V
IC = 1mA IB = 0.1mA
IE = 0
VCB = NOTE 3
IE = 0
VCB = 3V
IE = 0
VCB = 5V
VCC = 0
VCC = NOTE 4
IC = 1mA VCE = 5V
IC = 100µA VCE = 5V
BW = 200Hz, RG = 10 KΩ
f=1KHz
Linear Integrated Systems 4042 Clipper Court, Fremont, CA 94538 • TEL: (510) 490-9160 • FAX: (510) 353-0261
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