NTE221 查看數據表（PDF） - NTE Electronics

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NTE221

Dual Gate, N–Channel for VHF TV Receivers Applications

NTE Electronics 

NTE221

MOSFET

Dual Gate, N–Channel for

VHF TV Receivers Applications

Description:

The NTE221 is an N–channel depletion type, dual–insulated gate, field–effect transistor that utilizes

MOS construction. This device has characteristics which makes it highly desirable for use in RF–am-

plifier applications.

Features:

D Extremely Low Feedback Capacitance

D High Power Gain

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)

Drain–to–Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 to +20V

Gate 1–to–Source Voltage, VG1S

Continuous (DC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +1V to –8V

Peak AC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +20V to –8V

Gate 2–to–Source Voltage, VG2S

Continuous (DC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –8V to 40% of VDS

Peak AC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –8V to +20V

Drain–to–Gate Voltage, VDG1 or VDG2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +20V

Pulsed Drain Current (Note 1), ID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA

Transistor Dissipation (TA = +25°C), PT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mW

Derate Linearly Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.67mW/°C

Operating Ambient Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +175°C

Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +175°C

Lead Temperature (During Soldering, 1/32” from seating surface, 10sec max), TL . . . . . . . . +265°C

Note 1. Pulse test: Pulse Width ≤ 20ms, Duty Cycle ≤ 15%.

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Gate 1–to–Source Cutoff Voltage

VG1S(off) VDS = 15V, VG2S = 4V, ID = 200mA –

–2

–

V

Gate 2–to–Source Cutoff Voltage

VG2S(off) VDS = 15V, VG1S = 0, ID = 200mA

–

–2

–

V

Gate 1 Leakage Current

IG1SS VG1S = 20V, VG2S = 0, VDS = 0

–

–

1

nA

Gate 2 Leakage Current

IG2SS VG2S = 20V, VG1S = 0, VDS = 0

–

–

1

nA

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