NTE221 查看數據表（PDF） - NTE Electronics

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NTE221

Dual Gate, N–Channel for VHF TV Receivers Applications

NTE Electronics 

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Drain Current

Forward Transconductance

IDSS

gfs

VDS = 13V, VG1S = 0, VG2S = 4V

VDS = 13V, ID = 10mA, VG2S = 4V,

f = 1kHz

–

18 –

mA

– 1000 – µmhos

Performance Characteristics: (TA = +25°C, f = 200MHz, Note 2 unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Small–Signal, Short Circuit Reverse

Transfer Capacitance

Crss (Drain–to–Gate 1) at f = 1MHz – 0.02 0.03 pF

Output Capacitance

Input Capacitance

Input Resistance

Output Resistance

Magnitude of Forward Transconductance

Phase Angle of Forward Transadmittance

Coss

Ciss

riss

ross

|Yfs|

– 2.2 –

pF

– 5.5 –

pF

– 1.2 –

kΩ

– 2.8 –

kΩ

– 11000 – µmhos

– –46 – deg

Maximum Available Power Gain

MAG

–

20

–

dB

Maximum Usable Power Gain

(Unneutralized)

MUGu Note 3

–

20

–

dB

Power Gain

GPS

Noise Figure

NF

– 17.5 –

dB

–

–

5

dB

Note 2. VG1S is adjusted for ID = 10mA, Gate 2 at AC ground potential, VDS = 13V, VG2S = 4V.

Note 3. Limited by practical design considerations.

.190

(4.82)

.500

(12.7)

Min

.220 (5.58) Dia

.185 (4.7) Dia

.030 (.762)

.018 (0.45) Dia

Drain

Gate 2

Gate 1

45°

Source/Case

.040 (1.02)

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