SST32HF162 查看數據表（PDF） - Silicon Storage Technology
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SST32HF162 Datasheet PDF : 28 Pages
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Multi-Purpose Flash (MPF) + SRAM ComboMemory
SST32HF802 / SST32HF162 / SST32HF164
Data Sheet
TABLE 4: SOFTWARE COMMAND SEQUENCE
Command
Sequence
Word-Program
Sector-Erase
Block-Erase
Chip-Erase
Software ID Entry5,6
Software ID Exit
Software ID Exit
1st Bus
Write Cycle
Addr1 Data2
5555H AAH
5555H AAH
5555H AAH
5555H AAH
5555H AAH
XXH F0H
5555H AAH
2nd Bus
Write Cycle
Addr1 Data2
2AAAH 55H
2AAAH 55H
2AAAH 55H
2AAAH 55H
2AAAH 55H
2AAAH 55H
3rd Bus
Write Cycle
Addr1 Data2
5555H A0H
5555H 80H
5555H 80H
5555H 80H
5555H 90H
5555H F0H
4th Bus
Write Cycle
Addr1 Data2
WA3 Data
5555H AAH
5555H AAH
5555H AAH
5th Bus
Write Cycle
Addr1 Data2
2AAAH 55H
2AAAH 55H
2AAAH 55H
1. Address format A14-A0 (Hex),Address A15 can be VIL or VIH, but no other value, for the Command sequence.
2. DQ15-DQ8 can be VIL or VIH, but no other value, for the Command sequence.
3. WA = Program word address
4. SAX for Sector-Erase; uses AMS-A11 address lines
BAX, for Block-Erase; uses A19-A15 address lines
AMS = Most significant address
AMS = A18 for SST32HF802 and A19 for SST32HF162/164
5. The device does not remain in Software Product ID Mode if powered down.
6. With AMS-A1 =0; SST Manufacturer’s ID= 00BFH, is read with A0=0,
SST32HF802 Device ID = 2781H, is read with A0=1.
SST32HF162/164 Device ID = 2782H, is read with A0=1.
6th Bus
Write Cycle
Addr1 Data2
SAX4 30H
BAX4 50H
5555H 10H
T4.2 520
Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute Maximum
Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation
of the device at these conditions or conditions greater than those defined in the operational sections of this data
sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.)
Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -20°C to +85°C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C
D. C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-0.5V to VDD1+0.3V
Transient Voltage (<20 ns) on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -1.0V to VDD1+1.0V
Package Power Dissipation Capability (Ta = 25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W
Surface Mount Lead Soldering Temperature (3 Seconds) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240°C
Output Short Circuit Current2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
1. VDD = VDDF and VDDS
2. Outputs shorted for no more than one second. No more than one output shorted at a time.
OPERATING RANGE
Range
Commercial
Extended
Ambient Temp
0°C to +70°C
-20°C to +85°C
VDD
2.7-3.3V
2.7-3.3V
AC CONDITIONS OF TEST
Input Rise/Fall Time . . . . . . . . . . . . . . 5 ns
Output Load . . . . . . . . . . . . . . . . . . . . CL = 30 pF
See Figures 16 and 17
©2001 Silicon Storage Technology, Inc.
8
S71171-05-000 8/01 520
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