DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

L584 查看數據表(PDF) - STMicroelectronics

零件编号
产品描述 (功能)
生产厂家
L584
ST-Microelectronics
STMicroelectronics ST-Microelectronics
L584 Datasheet PDF : 13 Pages
First Prev 11 12 13
Figure 9 : Application circuit showing how two separate supplies can be used.
L584
In this application it is assumed that the 5V supply
for L584 is taken from a logic supply, which is al-
ready protected, against load dump transients and
vol-tage reversal.
Pin 1 must be left
alwaLys lower than
open, as
46V even
shown in fig. 9, if VS is
during the voltage tran-
sienRts.
Note that toff is also related to the required current
ripple I on the peak or on the holding current level
by :
toff = –
ln (Io I) RL + Voff
Io RL + Voff
Where : Io is the initial current valuein OFF condition
(equal to Ip or IH in accordance to the current level
considered),
VOFF = VDIODE + VCEQ1
RL is the series resistance value of the induc-
tance L :
Therefore C2 can be dimensioned directly by :
C2 =
IREF L
12
ln (Io I) RL + VOFF
RL Io RL + VOFF
Note that toff is the same for both the peak and hold-
ing current.
ton time is given by :
L Von – R(I1 – I)
ton = R ln Von – RI1
where : I1 is the final current value in ON condition
(equal to Ip or IH in accordance to the current level
considered),
R = RL + RSENSE
Von = VS – VCEsatQ2
If the constant times are respectively
L
L
R > 20 toff and R > 20 ton
it is possible to consider a purely inductive load and
therefore :
I
I
toff = L Vo ; ton = L Von
11/13

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]