P80NF10(2002) 查看數據表（PDF） - STMicroelectronics

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P80NF10
(Rev.:2002)

N-CHANNEL 100V - 0.012Ω - 80A TO-220/TO-220FP LOW GATE CHARGE STripFET™II POWER MOSFET

STMicroelectronics 

STP80NF10/STP80NF10FP

THERMAL DATA

Rthj-case

Rthj-amb

Tl

Thermal Resistance Junction-case Max

Thermal Resistance Junction-ambient Max

Maximum Lead Temperature For Soldering Purpose

TO-220

0.5

TO-220FP

3.33

62.5

300

°C/W

°C/W

°C

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)

OFF

Symbol

Parameter

Test Conditions

Min. Typ. Max. Unit

V(BR)DSS Drain-source

ID = 250 µA, VGS = 0

100

V

Breakdown Voltage

IDSS

Zero Gate Voltage

Drain Current (VGS = 0)

VDS = Max Rating

VDS = Max Rating, TC = 125 °C

1

µA

10

µA

IGSS

Gate-body Leakage

Current (VDS = 0)

VGS = ±20V

±100

nA

ON (1)

Symbol

VGS(th)

RDS(on)

Parameter

Gate Threshold Voltage

Static Drain-source On

Resistance

Test Conditions

VDS = VGS, ID = 250µA

VGS = 10V, ID = 40 A

Min.

2

Typ.

3

0.012

Max.

4

0.015

Unit

V

Ω

DYNAMIC

Symbol

gfs (1)

Ciss

Coss

Crss

Parameter

Forward Transconductance

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

Test Conditions

VDS =25V , ID =40 A

VDS = 25V, f = 1 MHz, VGS = 0

Min.

Typ.

80

4300

600

230

Max.

Unit

S

pF

pF

pF

2/9

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