P80NF10(2002) 查看數據表（PDF） - STMicroelectronics
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P80NF10
(Rev.:2002)
(Rev.:2002)
STMicroelectronics
P80NF10 Datasheet PDF : 9 Pages
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ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol
Parameter
Test Conditions
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 50V, ID = 40A
RG = 4.7Ω VGS = 10V
(see test circuit, Figure 3)
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 80V, ID = 80A,
VGS = 10V
SWITCHING OFF
Symbol
Parameter
td(off)
tf
Turn-off-Delay Time
Fall Time
Test Conditions
VDD = 50V, ID = 40A,
RG = 4.7Ω, VGS = 10V
(see test circuit, Figure 3)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
Source-drain Current
ISDM (2) Source-drain Current (pulsed)
VSD (1) Forward On Voltage
ISD = 80A, VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 80A, di/dt = 100A/µs,
VDD = 50V, Tj = 150°C
(see test circuit, Figure 5)
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
STP80NF10/STP80NF10FP
Min. Typ. Max. Unit
40
ns
145
ns
140
189
nC
23
nC
51
nC
Min. Typ. Max. Unit
134
ns
115
ns
Min. Typ. Max. Unit
80
A
320
A
1.3
V
155
ns
0.85
µC
11
A
Safe Operating Area for TO-220
Safe Operating Area for TO-220FP
3/9
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