STP7NE10 查看數據表（PDF） - STMicroelectronics
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STP7NE10 Datasheet PDF : 5 Pages
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STP7NE10
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
td(on)
tr
Parameter
Turn-on Time
Rise Time
Test Conditions
VDD = 50 V
RG = 4.7 Ω
ID = 3.5 A
VGS = 5 V
Min.
Typ.
6.5
15
Max.
Unit
ns
ns
Qg
Total Gate Charge
VDD = 80 V ID = 5 A VGS = 5 V
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
14
18
nC
6
nC
4
nC
SWITCHING OFF
Symbol
td(Voff)
tf
Parameter
Turn-off Delay Time
Fall Time
Test Conditions
VDD = 50 V
RG = 4.7 Ω
ID = 3.5A
VGS = 10 V
Min.
Typ.
25
7
Max.
Unit
ns
ns
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
VDD=80V
RG = 4.7 Ω
ID=7A
7
ns
VGS = 10 V
8
ns
16
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM(•)
Source-drain Current
Source-drain Current
(pulsed)
VSD (∗) Forward On Voltage
ISD = 8 A VGS = 0
trr
Reverse Recovery
Time
Qrr
Reverse Recovery
Charge
ISD = 5 A
VDD = 50 V
IRRM
Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
di/dt = 100 A/µs
Tj = 150 oC
Min.
Typ.
Max.
7
28
Unit
A
A
1.5
V
75
ns
210
µC
5.5
A
3/5
®
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